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Transistors - Bipolar (BJT) - Arrays, Pre-Biased
RN2907FE,LF(CB

RN2907FE,LF(CB

RoHS

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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

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Inventory: 6848

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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Technical

Published 2014

Power Dissipation-Max 100mW

Collector Emitter Voltage (VCEO) 300mV

Max Collector Current 100mA

Collector Emitter Breakdown Voltage 50V

Max Breakdown Voltage 50V

Frequency - Transition 200MHz

Compliance

RoHS Status RoHS Compliant

Physical

Mount Surface Mount

Alternative Model

STMicroelectronics

Microsemi Corporation

Microsemi Corporation

BLF4G20LS-130,112

Vishay Semiconductor Diodes Division

Taiwan Semiconductor Corporation

Microsemi Corporation

Microsemi Corporation

Taiwan Semiconductor Corporation

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