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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Package / Case DIP

Technical

Published 2000
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 14
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.29.00.75
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 14
Qualification Status Not Qualified
Number of Elements 4
Polarity NPN
Voltage 60V
Power Dissipation-Max 650mW
Element Configuration Single
Current 5A
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 500mA
JEDEC-95 Code TO-116
Collector Emitter Breakdown Voltage 40V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 2.6V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 30

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free
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