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SVD5806NT4G

ON Semiconductor
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
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Inventory: 1042
Minimum: 1
Total Price: USD $5.8
Unit Price: USD $5.804516
≥1 USD $5.804516
≥10 USD $5.47596
≥100 USD $5.166
≥500 USD $4.873586
≥1000 USD $4.597719
≥3000 USD $4.337477

Technical Details

Supply Chain

Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)

Physical

Surface Mount YES
Transistor Element Material SILICON

Technical

JESD-609 Code e3
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Operating Temperature (Max) 175°C
Operating Temperature (Min) -55°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 33A
Drain-source On Resistance-Max 0.019Ohm
Pulsed Drain Current-Max (IDM) 67A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 39 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

Compliance

RoHS Status RoHS Compliant

Alternative Model

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