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Transistors - Bipolar (BJT) - Single, Pre-Biased
RN2110,LF(CB

RN2110,LF(CB

RoHS

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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

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Inventory: 4280

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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount

Technical

Published 2014

Power Dissipation-Max 100mW

Collector Emitter Voltage (VCEO) 300mV

Max Collector Current 100mA

Collector Emitter Breakdown Voltage 50V

Max Breakdown Voltage 50V

Frequency - Transition 200MHz

Compliance

RoHS Status RoHS Compliant

Alternative Model

Infineon Technologies

ON Semiconductor

Comchip Technology

Taiwan Semiconductor Corporation

BZX384C43-HE3-18

Vishay Semiconductor Diodes Division

ON Semiconductor

Central Semiconductor Corp

Vishay Semiconductor Diodes Division

Littelfuse Inc.

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