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BSM75GB60DLC

Infineon Technologies AG
RoHS
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Package /
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT Modules 600V 75A DUAL
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Technical Details

Physical

Surface Mount NO
Number of Terminals 7
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Pbfree Code icon-pbfree no
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 2
Configuration SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 355W
Turn On Time 90 ns
Collector Current-Max (IC) 100A
Turn Off Time-Nom (toff) 205 ns
Collector-Emitter Voltage-Max 600V
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.45 V

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