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Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 88A TO220-3
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Technical Details

Physical

Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

JESD-609 Code e3
Pbfree Code icon-pbfree no
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 88A
Drain-source On Resistance-Max 0.011Ohm
Pulsed Drain Current-Max (IDM) 352A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 560 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 300W
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