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BSB044N08NN3 G

Infineon Technologies AG
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
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Inventory: 28406
Minimum: 1
Total Price: USD $5.81
Unit Price: USD $5.806448
≥1 USD $5.806448
≥10 USD $4.765058
≥100 USD $4.615433
≥500 USD $4.466805
≥1000 USD $4.318178

Technical Details

Physical

Surface Mount YES
Number of Terminals 3
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

JESD-609 Code e4
Pbfree Code icon-pbfree yes
Moisture Sensitivity Level (MSL) 3
ECCN Code EAR99
Terminal Finish Silver/Nickel (Ag/Ni)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-MBCC-N3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 18A
Drain-source On Resistance-Max 0.0044Ohm
Pulsed Drain Current-Max (IDM) 360A
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 660 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

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