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IGB50N60T

Infineon Technologies AG
RoHS
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Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
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Inventory: 990
Minimum: 1
Total Price: USD $7.59
Unit Price: USD $7.592763
≥1 USD $7.592763
≥200 USD $2.939514
≥500 USD $2.939514
≥1000 USD $2.784243

Technical Details

Physical

Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON

Technical

JESD-609 Code e3
Pbfree Code icon-pbfree yes
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263AB
Power Dissipation-Max (Abs) 333W
Turn On Time 60 ns
Collector Current-Max (IC) 100A
Turn Off Time-Nom (toff) 396 ns
Collector-Emitter Voltage-Max 600V
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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