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BSZ16DN25NS3 G

Infineon Technologies AG
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
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Inventory: 5968
Minimum: 1
Total Price: USD $1.97
Unit Price: USD $1.970033
≥1 USD $1.970033
≥10 USD $1.858535
≥100 USD $1.753324
≥500 USD $1.654086
≥1000 USD $1.560453

Technical Details

Physical

Surface Mount YES
Number of Terminals 5
Transistor Element Material SILICON

Technical

JESD-609 Code e3
Pbfree Code icon-pbfree no
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 10.9A
Drain-source On Resistance-Max 0.165Ohm
Pulsed Drain Current-Max (IDM) 44A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 120 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

Compliance

RoHS Status RoHS Compliant

Alternative Model

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