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IPP200N25N3 G

Infineon Technologies AG
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
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Inventory: 1015
Minimum: 1
Total Price: USD $3.87
Unit Price: USD $3.872229
≥1 USD $3.872229
≥10 USD $3.800521

Technical Details

Physical

Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Pbfree Code icon-pbfree yes
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 64A
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 256A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 320 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

Alternative Model

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