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IPD80N04S3-06

Infineon Technologies AG
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
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Inventory: 28344
Minimum: 1
Total Price: USD $5.64
Unit Price: USD $5.638868
≥1 USD $5.638868
≥10 USD $4.626405
≥100 USD $4.481768
≥500 USD $4.33713
≥1000 USD $4.192493

Technical Details

Physical

Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Pbfree Code icon-pbfree yes
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0052Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 125 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 88W

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