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IS64LF25636A-7.5B3LA3

ISSI, Integrated Silicon Solution Inc
RoHS
RoHS RoHS compliant
Package 165-TBGA
Category Integrated Circuits (ICs) / Memory
Description Synchronous Active 3-STATE AEC-Q100 ic memory -40C~125C TA 3.3V 9Mb 175mA
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case 165-TBGA
Surface Mount YES
Number of Pins 165

Technical

Operating Temperature -40°C~125°C TA
Packaging Tray
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 165
Technology SRAM - Synchronous, SDR
Voltage - Supply 3.135V~3.465V
Terminal Position BOTTOM
Terminal Pitch 1mm
Operating Supply Voltage 3.3V
Memory Size 9Mb 256K x 36
Number of Ports 4
Nominal Supply Current 175mA
Memory Type Volatile
Clock Frequency 117MHz
Access Time 7.5ns
Memory Format SRAM
Memory Interface Parallel
Organization 256KX36
Output Characteristics 3-STATE
Memory Width 36
Address Bus Width 18b
Density 9 Mb
Standby Current-Max 0.09A
Screening Level AEC-Q100
I/O Type COMMON
Sync/Async Synchronous
Word Size 36b

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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