Operating Temperature 0°C~70°C TA
Packaging Tray
Published 2003
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 165
Terminal Finish Tin/Lead/Silver (Sn/Pb/Ag)
Additional Feature BURST ARCHITECTURE
Technology SRAM - Synchronous, DDR II+
Voltage - Supply 1.7V~1.9V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 1.8V
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number CY7C1650
Operating Supply Voltage 1.8V
Memory Size 144Mb 4M x 36
Number of Ports 1
Nominal Supply Current 980mA
Memory Type Volatile
Clock Frequency 450MHz
Access Time 450 ps
Memory Format SRAM
Memory Interface Parallel
Organization 4MX36
Memory Width 36
Address Bus Width 21b
Density 144 Mb
Sync/Async Synchronous
Word Size 36b