Operating Temperature -40°C~85°C TA
Packaging Tray
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 100
ECCN Code 3A991.B.2.A
Terminal Finish MATTE TIN
HTS Code 8542.32.00.41
Technology SRAM - Synchronous, SDR
Voltage - Supply 2.375V~2.625V
Terminal Position QUAD
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 2.5V
Terminal Pitch 0.65mm
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 100
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 2.625V
Power Supplies 2.5V
Supply Voltage-Min (Vsup) 2.375V
Memory Size 36Mb 1M x 36
Memory Type Volatile
Max Supply Current 450mA
Clock Frequency 250MHz
Access Time 2.8ns
Memory Format SRAM
Memory Interface Parallel
Organization 1MX36
Output Characteristics 3-STATE
Memory Width 36
Standby Current-Max 0.12A
Memory Density 37748736 bit
I/O Type COMMON
Standby Voltage-Min 2.38V