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IS62WV51216ALL-70BI

ISSI, Integrated Silicon Solution Inc
RoHS
/
Package 48-TFBGA
Category Integrated Circuits (ICs) / Memory
Description Asynchronous Active 3-STATE BOTTOM ic memory -40C~85C TA 1.8V 8Mb 4mA
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 48-TFBGA
Surface Mount YES
Number of Pins 48

Dimensions

Length 8.7mm

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -40°C~85°C TA
Packaging Tray
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 48
Terminal Finish Tin/Lead (Sn/Pb)
Technology SRAM - Asynchronous
Voltage - Supply 2.5V~3.6V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 0.75mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 48
Qualification Status Not Qualified
Operating Supply Voltage 1.8V
Supply Voltage-Max (Vsup) 2.2V
Memory Size 8Mb 512K x 16
Number of Ports 1
Nominal Supply Current 4mA
Memory Type Volatile
Memory Format SRAM
Memory Interface Parallel
Output Characteristics 3-STATE
Memory Width 16
Write Cycle Time - Word, Page 70ns
Address Bus Width 19b
Density 8 Mb
Standby Current-Max 0.00002A
Access Time (Max) 70 ns
I/O Type COMMON
Sync/Async Asynchronous
Word Size 16b

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