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IS46DR81280B-25DBLA1-TR

ISSI, Integrated Silicon Solution Inc
RoHS
RoHS RoHS compliant
Package 60-TFBGA
Category Integrated Circuits (ICs) / Memory
Description Active 3-STATE AEC-Q100 BOTTOM ic memory -40C~85C TA 1.8V 8b 0.29mA
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 60-TFBGA
Surface Mount YES

Technical

Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 60
Technology SDRAM - DDR2
Voltage - Supply 1.7V~1.9V
Terminal Position BOTTOM
Supply Voltage 1.8V
Terminal Pitch 0.8mm
JESD-30 Code R-PBGA-B60
Qualification Status Not Qualified
Power Supplies 1.8V
Memory Size 1Gb 128M x 8
Memory Type Volatile
Supply Current-Max 0.29mA
Access Time 400ps
Memory Format DRAM
Memory Interface Parallel
Data Bus Width 8b
Organization 128MX8
Output Characteristics 3-STATE
Memory Width 8
Write Cycle Time - Word, Page 15ns
Memory Density 1073741824 bit
Max Frequency 400MHz
Screening Level AEC-Q100
I/O Type COMMON
Refresh Cycles 8192
Sequential Burst Length 48
Interleaved Burst Length 48

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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