Operating Temperature -40°C~85°C TA
Packaging Tray
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 165
ECCN Code 3A991.B.2.A
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature FLOW-THROUGH ARCHITECTURE
HTS Code 8542.32.00.41
Technology SRAM - Synchronous, SDR
Voltage - Supply 3.135V~3.465V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 1mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 165
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.465V
Power Supplies 2.5/3.33.3V
Supply Voltage-Min (Vsup) 3.135V
Memory Size 18Mb 1M x 18
Memory Type Volatile
Clock Frequency 133MHz
Supply Current-Max 0.45mA
Access Time 6.5ns
Memory Format SRAM
Memory Interface Parallel
Organization 1MX18
Output Characteristics 3-STATE
Memory Width 18
Standby Current-Max 0.075A
Memory Density 18874368 bit
I/O Type COMMON
Standby Voltage-Min 3.14V