Operating Temperature -40°C~125°C TA
Packaging Tray
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 100
ECCN Code 3A991.B.2.A
Terminal Finish Matte Tin (Sn)
HTS Code 8542.32.00.41
Technology SRAM - Synchronous, SDR
Voltage - Supply 3.135V~3.465V
Terminal Position QUAD
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.65mm
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 100
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.465V
Power Supplies 2.5/3.33.3V
Supply Voltage-Min (Vsup) 3.135V
Memory Size 4Mb 128K x 32
Memory Type Volatile
Supply Current-Max 0.185mA
Access Time 7.5ns
Memory Format SRAM
Memory Interface Parallel
Organization 128KX32
Output Characteristics 3-STATE
Memory Width 32
Standby Current-Max 0.1A
Memory Density 4194304 bit
Max Frequency 117MHz
I/O Type COMMON
Standby Voltage-Min 3.14V