Operating Temperature -40°C~85°C TA
Packaging Tray
JESD-609 Code e0
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 100
ECCN Code 3A991.B.2.A
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature FLOW-THROUGH ARCHITECTURE
HTS Code 8542.32.00.41
Technology SRAM - Synchronous, SDR
Voltage - Supply 3.135V~3.465V
Terminal Position QUAD
Peak Reflow Temperature (Cel) 240
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.65mm
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 100
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.465V
Power Supplies 2.5/3.33.3V
Supply Voltage-Min (Vsup) 3.135V
Memory Size 4.5Mb 128K x 36
Memory Type Volatile
Clock Frequency 117MHz
Supply Current-Max 0.16mA
Access Time 7.5ns
Memory Format SRAM
Memory Interface Parallel
Organization 128KX36
Output Characteristics 3-STATE
Memory Width 36
Standby Current-Max 0.035A
Memory Density 4718592 bit
I/O Type COMMON
Standby Voltage-Min 3.14V