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IS61LV12824-10TQI

ISSI, Integrated Silicon Solution Inc
RoHS
/
Package 100-LQFP
Category Integrated Circuits (ICs) / Memory
Description Asynchronous Not For New Designs 3-STATE QUAD ic memory -40C~85C TA 2.97V 3Mb 210mA
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 100-LQFP
Surface Mount YES
Number of Pins 100

Technical

Operating Temperature -40°C~85°C TA
Packaging Tray
JESD-609 Code e0
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 100
Terminal Finish Tin/Lead (Sn/Pb)
Technology SRAM - Asynchronous
Voltage - Supply 3.135V~3.6V
Terminal Position QUAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.65mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 100
Qualification Status Not Qualified
Operating Supply Voltage 3.3V
Supply Voltage-Max (Vsup) 3.63V
Supply Voltage-Min (Vsup) 2.97V
Memory Size 3Mb 128K x 24
Number of Ports 1
Nominal Supply Current 210mA
Memory Type Volatile
Memory Format SRAM
Memory Interface Parallel
Output Characteristics 3-STATE
Memory Width 24
Write Cycle Time - Word, Page 10ns
Address Bus Width 17b
Density 3 Mb
Standby Current-Max 0.02A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 24b
Standby Voltage-Min 3V

Dimensions

Length 20mm

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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