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  • IS64WV25616BLL-10BLA3-TR

IS64WV25616BLL-10BLA3-TR

ISSI, Integrated Silicon Solution Inc
RoHS
RoHS RoHS compliant
Package 48-TFBGA
Category Integrated Circuits (ICs) / Memory
Description Active 3-STATE AEC-Q100 BOTTOM ic memory -40C~125C TA 2.5/3.3V 4194304bit 0.015A
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Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mounting Type Surface Mount
Package / Case 48-TFBGA
Surface Mount YES
Number of Pins 48

Technical

Operating Temperature -40°C~125°C TA
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48
Technology SRAM - Asynchronous
Voltage - Supply 2.4V~3.6V
Terminal Position BOTTOM
Terminal Pitch 0.75mm
Qualification Status Not Qualified
Power Supplies 2.5/3.3V
Memory Size 4Mb 256K x 16
Memory Type Volatile
Supply Current-Max 0.065mA
Memory Format SRAM
Memory Interface Parallel
Organization 256KX16
Output Characteristics 3-STATE
Memory Width 16
Write Cycle Time - Word, Page 10ns
Standby Current-Max 0.015A
Memory Density 4194304 bit
Screening Level AEC-Q100
Access Time (Max) 10 ns
I/O Type COMMON
Standby Voltage-Min 2V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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