J112RL1G

ON Semiconductor

RoHS

Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - JFETs

Description JFET N-CH 35V 0.35W TO92

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Surface Mount NO

Number of Pins 3

Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ

Packaging Tape & Reel (TR)

Published 2006

JESD-609 Code e1

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature EUROPEAN PART NUMBER

HTS Code 8541.21.00.95

Subcategory Other Transistors

Voltage - Rated DC 35V

Max Power Dissipation 350mW

Terminal Position BOTTOM

Peak Reflow Temperature (Cel) 260

Current Rating 50mA

Time@Peak Reflow Temperature-Max (s) 40

Base Part Number J112

Pin Count 3

Qualification Status Not Qualified

Number of Elements 1

Element Configuration Single

Operating Mode DEPLETION MODE

FET Type N-Channel

Transistor Application CHOPPER

Drain to Source Voltage (Vdss) 35V

Gate to Source Voltage (Vgs) 35V

Drain-source On Resistance-Max 50Ohm

FET Technology JUNCTION

Feedback Cap-Max (Crss) 5 pF

Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V

Voltage - Cutoff (VGS off) @ Id 1V @ 1μA

Resistance - RDS(On) 50Ohm

Compliance

RoHS Status RoHS Compliant

Lead Free Lead Free

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