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J113,126

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - JFETs
Description Trans JFET N-CH 40V Si 3-Pin SPT Ammo
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number J113
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power - Max 400mW
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 6pF @ 10V VGS
Drain-source On Resistance-Max 100Ohm
DS Breakdown Voltage-Min 40V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.4W
Source Url Status Check Date 2013-06-14 00:00:00
Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id 500mV @ 1μA
Voltage - Breakdown (V(BR)GSS) 40V
Resistance - RDS(On) 100Ohm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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