Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series BIMOSFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Terminal Position SINGLE
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection ISOLATED
Input Type Standard
Power - Max 500W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 116A
Reverse Recovery Time 160 ns
Collector Emitter Breakdown Voltage 2.5kV
Voltage - Collector Emitter Breakdown (Max) 2500V
Turn On Time 632 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 64A
Turn Off Time-Nom (toff) 397 ns
Gate Charge 400nC
Current - Collector Pulsed (Icm) 750A
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 5V