Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX3?, XPT?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 400W
Element Configuration Single
Input Type Standard
Power - Max 400W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 92A
Reverse Recovery Time 420 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 100A
Gate Charge 270nC
Current - Collector Pulsed (Icm) 440A
Td (on/off) @ 25°C 48ns/123ns
Switching Energy 6.5mJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V