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IRG4BC20SD

Infineon Technologies
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 19A 60W TO220AB
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Inventory: 1325
Minimum: 1
Total Price: USD $1.35
Unit Price: USD $1.350133
≥1 USD $1.350133
≥10 USD $1.310423
≥100 USD $1.270713
≥500 USD $1.221076

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature ULTRA FAST SOFT RECOVERY
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 60W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 37ns
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 19A
Turn On Time 99 ns
Test Condition 480V, 10A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 10A
Turn Off Time-Nom (toff) 1780 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 38A
Td (on/off) @ 25°C 62ns/690ns
Switching Energy 320μJ (on), 2.58mJ (off)

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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