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IRG4PC50KPBF

Infineon Technologies
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 52A 200W TO247AC
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Inventory: 2875
Minimum: 1
Total Price: USD $7.91
Unit Price: USD $7.913168
≥1 USD $7.913168
≥10 USD $6.492728
≥100 USD $6.290235
≥500 USD $6.086745
≥1000 USD $5.884253

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 250
Current Rating 52A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 38 ns
Transistor Application POWER CONTROL
Rise Time 34 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 160 ns
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 52A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.84V
Turn On Time 72 ns
Test Condition 480V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A
Turn Off Time-Nom (toff) 430 ns
Gate Charge 200nC
Current - Collector Pulsed (Icm) 104A
Td (on/off) @ 25°C 38ns/160ns
Switching Energy 490μJ (on), 680μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120 ns

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

Dimensions

Height 20.3mm
Length 15.875mm
Width 5.3mm

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