Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series BIMOSFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 625W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 625W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.2V
Max Collector Current 130A
Reverse Recovery Time 1.9 μs
Collector Emitter Breakdown Voltage 3kV
Voltage - Collector Emitter Breakdown (Max) 3000V
Turn On Time 637 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 55A
Turn Off Time-Nom (toff) 475 ns
Gate Charge 335nC
Current - Collector Pulsed (Icm) 600A
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 5V