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IXXX200N65B4

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 650V 370A 1150W PLUS247
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Inventory: 945
Minimum: 1
Total Price: USD $45.47
Unit Price: USD $45.472685
≥1 USD $45.472685
≥210 USD $18.14441
≥510 USD $17.53785
≥990 USD $17.238706

Technical Details

Supply Chain

Factory Lead Time 28 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Series GenX4?, XPT?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.15kW
Reach Compliance Code unknown
Element Configuration Single
Power Dissipation 1.15kW
Input Type Standard
Power - Max 1150W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 370A
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 160A
IGBT Type PT
Gate Charge 553nC
Current - Collector Pulsed (Icm) 1000A
Td (on/off) @ 25°C 62ns/245ns
Switching Energy 4.4mJ (on), 2.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V

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