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FGH40T65SHDF-F155
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 650V 80A 268W TO-247-3
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Inventory: 211
Minimum: 1
Total Price: USD $3.46
Unit Price: USD $3.45576
≥1 USD $3.45576
≥10 USD $2.738117
≥100 USD $2.346887
≥500 USD $2.086124
≥1000 USD $1.78625
≥3000 USD $1.681938
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 268W
Element Configuration Single
Input Type Standard
Power - Max 268W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 101 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.45V
Test Condition 400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.81V @ 15V, 40A
IGBT Type Field Stop
Gate Charge 68nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 18ns/64ns
Switching Energy 1.22mJ (on), 440μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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