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HGTG30N60B3

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description FAIRCHILD SEMICONDUCTOR HGTG30N60B3IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins
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Inventory: 16240
Minimum: 1
Total Price: USD $2.92
Unit Price: USD $2.91984
≥1 USD $2.91984

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON

Dimensions

Height 20.82mm
Length 15.87mm
Width 4.82mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 208W
Current Rating 60A
Base Part Number HGTG30N60
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 208W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.45V
Max Breakdown Voltage 600V
Turn On Time 56 ns
Test Condition 480V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Continuous Collector Current 60A
Turn Off Time-Nom (toff) 365 ns
Gate Charge 170nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 36ns/137ns
Switching Energy 500μJ (on), 680μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 150 ns

Alternative Model

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