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APT70GR65B2SCD30

Microsemi Corporation
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTO
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package T-MAX? [B2]

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 595W
Power - Max 595W
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 134A
Collector Emitter Breakdown Voltage 650V
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 134A
Test Condition 433V, 70A, 4.3Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 70A
IGBT Type NPT
Gate Charge 305nC
Current - Collector Pulsed (Icm) 260A
Td (on/off) @ 25°C 19ns/170ns

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