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SIGC100T65R3EX1SA2

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT CHIP
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case Die

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -40°C~175°C TJ
Published 2016
Series TrenchStop?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 650V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Dual Supply Voltage 650V
Current - Collector (Ic) (Max) 200A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 200A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 600A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V

Alternative Model

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