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SIGC42T60UNX1SA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 3 CHIP 600V WAFER
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Published 2016
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code S-XUUC-N3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.15V
Max Dual Supply Voltage 600V
Current - Collector (Ic) (Max) 50A
Turn On Time 79 ns
Test Condition 400V, 50A, 6.8 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 50A
Turn Off Time-Nom (toff) 370 ns
IGBT Type NPT
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 48ns/350ns

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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