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IXYH24N90C3

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT Transistors GenX3 900V XPT IGBTs
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Technical Details

Supply Chain

Factory Lead Time 28 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX3?, XPT?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 240W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 240W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 46A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.3V
Turn On Time 60 ns
Test Condition 450V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 24A
Turn Off Time-Nom (toff) 215 ns
Gate Charge 40nC
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 20ns/73ns
Switching Energy 1.35mJ (on), 400μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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