APT50GN60BDQ2G

Microsemi Corporation

RoHS

RoHS compliant

Package TO-247-3

Category Discrete Semiconductor Products / Transistors - IGBTs - Single

Description Trans IGBT Chip N-CH 600V 107A 3-Pin(3+Tab) TO-247

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Inventory: 180

Minimum: 1

Total Price: USD $6.72

Unit Price: USD $6.71748

≥1 USD $6.71748

≥10 USD $5.4516

Technical Details

Supply Chain

Factory Lead Time 25 Weeks

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-247-3

Weight 38.000013g

Transistor Element Material SILICON

Dimensions

Height 5.31mm

Length 21.46mm

Width 16.26mm

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ

Packaging Tube

Published 1999

JESD-609 Code e1

Pbfree Code yes

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)

Subcategory Insulated Gate BIP Transistors

Voltage - Rated DC 600V

Max Power Dissipation 366W

Current Rating 107A

Pin Count 3

JESD-30 Code R-PSFM-T3

Number of Elements 1

Element Configuration Single

Case Connection COLLECTOR

Input Type Standard

Turn On Delay Time 20 ns

Transistor Application POWER CONTROL

Polarity/Channel Type N-CHANNEL

Turn-Off Delay Time 230 ns

Collector Emitter Voltage (VCEO) 600V

Max Collector Current 107A

JEDEC-95 Code TO-247AD

Collector Emitter Breakdown Voltage 600V

Collector Emitter Saturation Voltage 1.5V

Turn On Time 45 ns

Test Condition 400V, 50A, 4.3 Ω, 15V

Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 50A

Continuous Collector Current 107A

Turn Off Time-Nom (toff) 400 ns

IGBT Type Trench Field Stop

Gate Charge 325nC

Current - Collector Pulsed (Icm) 150A

Td (on/off) @ 25°C 20ns/230ns

Switching Energy 1185μJ (on), 1565μJ (off)

Gate-Emitter Voltage-Max 30V

Gate-Emitter Thr Voltage-Max 6.5V

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