IXGT28N120BD1

IXYS

RoHS

RoHS compliant

Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Category Discrete Semiconductor Products / Transistors - IGBTs - Single

Description Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(2+Tab) TO-268

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Technical Details

Supply Chain

Factory Lead Time 25 Weeks

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Weight 4.500005g

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ

Packaging Bulk

Published 2009

JESD-609 Code e3

Pbfree Code yes

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

Terminal Finish Matte Tin (Sn)

Subcategory Insulated Gate BIP Transistors

Max Power Dissipation 250W

Terminal Form GULL WING

Peak Reflow Temperature (Cel) NOT SPECIFIED

Reach Compliance Code not_compliant

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Base Part Number IXG*28N120

Pin Count 4

JESD-30 Code R-PSSO-G2

Qualification Status Not Qualified

Number of Elements 1

Element Configuration Single

Case Connection COLLECTOR

Input Type Standard

Power - Max 250W

Transistor Application POWER CONTROL

Polarity/Channel Type N-CHANNEL

Collector Emitter Voltage (VCEO) 1.2kV

Max Collector Current 50A

Reverse Recovery Time 40 ns

Collector Emitter Breakdown Voltage 1.2kV

Voltage - Collector Emitter Breakdown (Max) 1200V

Turn On Time 63 ns

Test Condition 960V, 28A, 5 Ω, 15V

Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 28A

Turn Off Time-Nom (toff) 590 ns

IGBT Type PT

Gate Charge 92nC

Current - Collector Pulsed (Icm) 150A

Td (on/off) @ 25°C 30ns/210ns

Switching Energy 2.2mJ (off)

Gate-Emitter Voltage-Max 20V

Gate-Emitter Thr Voltage-Max 5V

Fall Time-Max (tf) 320ns

Compliance

RoHS Status ROHS3 Compliant

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