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SIGC57T120R3LEX1SA3

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 50A DIE
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Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mounting Type Surface Mount
Package / Case Die

Technical

Packaging Bulk
Published 2014
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Drain to Source Voltage (Vdss) 1.2kV
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Dual Supply Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 150A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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