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IXGX320N60A3

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 320A 1000W PLUS247
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Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1kW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1kW
Case Connection COLLECTOR
Input Type Standard
Power - Max 1000W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 320A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.05V
Turn On Time 139 ns
Vce(on) (Max) @ Vge, Ic 1.25V @ 15V, 100A
Turn Off Time-Nom (toff) 1870 ns
IGBT Type PT
Gate Charge 560nC
Current - Collector Pulsed (Icm) 700A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V

Compliance

RoHS Status ROHS3 Compliant
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