IXXX100N60C3H1

IXYS

RoHS

RoHS compliant

Package TO-247-3

Category Discrete Semiconductor Products / Transistors - IGBTs - Single

Description IGBT Transistors GenX3 w/Diode XPT 600V

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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-247-3

Technical

Packaging Tube

Series GenX3?, XPT?

JESD-609 Code e3

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Terminal Finish Matte Tin (Sn)

Subcategory Insulated Gate BIP Transistors

Max Power Dissipation 695W

Reach Compliance Code not_compliant

Operating Temperature (Max) 150°C

Input Type Standard

Power - Max 695W

Polarity/Channel Type N-CHANNEL

Collector Emitter Voltage (VCEO) 2.2V

Max Collector Current 170A

Reverse Recovery Time 140 ns

Collector Emitter Breakdown Voltage 600V

Test Condition 360V, 70A, 2 Ω, 15V

Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 70A

IGBT Type PT

Gate Charge 150nC

Current - Collector Pulsed (Icm) 340A

Td (on/off) @ 25°C 30ns/90ns

Switching Energy 2mJ (on), 950μJ (off)

Gate-Emitter Voltage-Max 20V

Gate-Emitter Thr Voltage-Max 5.5V

Compliance

RoHS Status ROHS3 Compliant

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