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IRG4PSH71KDPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-274AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 78A 350W SUPER247
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Inventory: 204
Minimum: 1
Total Price: USD $9.04
Unit Price: USD $9.03672
≥1 USD $9.03672

Technical Details

Supply Chain

Factory Lead Time 7 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1999
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 350W
Peak Reflow Temperature (Cel) 250
Current Rating 78A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 350W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 84 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 78A
Reverse Recovery Time 107 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.97V
Turn On Time 152 ns
Test Condition 800V, 42A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 42A
Turn Off Time-Nom (toff) 660 ns
Gate Charge 410nC
Current - Collector Pulsed (Icm) 156A
Td (on/off) @ 25°C 67ns/230ns
Switching Energy 5.68mJ (on), 3.23mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 190 ns

Dimensions

Height 20.8mm
Length 16.0782mm
Width 5.3mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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