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IXBT42N170A

IXYS
RoHS
RoHS RoHS compliant
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description Trans IGBT Chip N-CH 1.7KV 42A 3-Pin(2+Tab) TO-268
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Inventory: 8804
Minimum: 1
Total Price: USD $58.85
Unit Price: USD $58.850086
≥1 USD $58.850086
≥210 USD $23.482136
≥510 USD $22.697744
≥990 USD $22.308994

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series BIMOSFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish PURE TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 357W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXB*42N170
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 357W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 42A
Reverse Recovery Time 330 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 5.2V
Max Breakdown Voltage 1.7kV
Turn On Time 63 ns
Test Condition 850V, 21A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 6V @ 15V, 21A
Turn Off Time-Nom (toff) 420 ns
Gate Charge 188nC
Current - Collector Pulsed (Icm) 265A
Td (on/off) @ 25°C 19ns/200ns
Switching Energy 3.43mJ (on), 430μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V

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