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STGW60H65DRF
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
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Inventory: 2352
Minimum: 1
Total Price: USD $5.81
Unit Price: USD $5.806448
≥1 USD $5.806448
≥10 USD $4.765058
≥100 USD $4.615433
≥500 USD $4.466805
≥1000 USD $4.318178
Technical Details
Supply Chain
Factory Lead Time 32 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 420W
Base Part Number STGW60
Element Configuration Single
Input Type Standard
Power - Max 420W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 120A
Reverse Recovery Time 19 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.9V
Test Condition 400V, 60A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 60A
IGBT Type Trench Field Stop
Gate Charge 217nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 85ns/178ns
Switching Energy 940μJ (on), 1.06mJ (off)
Gate-Emitter Voltage-Max 20V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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