APT35GN120BG

Microsemi Corporation

RoHS

RoHS compliant

Package TO-247-3

Category Discrete Semiconductor Products / Transistors - IGBTs - Single

Description Trans IGBT Chip N-CH 1.2KV 94A 3-Pin(3+Tab) TO-247

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Inventory: 176

Minimum: 1

Total Price: USD $7.83

Unit Price: USD $7.82628

≥1 USD $7.82628

≥10 USD $6.3525

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-247-3

Weight 38.000013g

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tube

Published 1999

JESD-609 Code e1

Pbfree Code yes

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature HIGH RELIABILITY

Subcategory Insulated Gate BIP Transistors

Voltage - Rated DC 1.2kV

Max Power Dissipation 379W

Peak Reflow Temperature (Cel) NOT SPECIFIED

Current Rating 94A

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Pin Count 3

JESD-30 Code R-PSFM-T3

Qualification Status Not Qualified

Number of Elements 1

Element Configuration Single

Case Connection COLLECTOR

Input Type Standard

Transistor Application POWER CONTROL

Polarity/Channel Type N-CHANNEL

Collector Emitter Voltage (VCEO) 1.2kV

Max Collector Current 94A

JEDEC-95 Code TO-247AD

Collector Emitter Breakdown Voltage 1.2kV

Voltage - Collector Emitter Breakdown (Max) 1200V

Collector Emitter Saturation Voltage 1.7V

Turn On Time 46 ns

Test Condition 800V, 35A, 2.2 Ω, 15V

Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A

Continuous Collector Current 94A

Turn Off Time-Nom (toff) 465 ns

IGBT Type NPT, Trench Field Stop

Gate Charge 220nC

Current - Collector Pulsed (Icm) 105A

Td (on/off) @ 25°C 24ns/300ns

Switching Energy 2.315mJ (off)

Gate-Emitter Voltage-Max 30V

Gate-Emitter Thr Voltage-Max 6.5V

Dimensions

Height 5.31mm

Length 21.46mm

Width 16.26mm

Compliance

RoHS Status RoHS Compliant

Lead Free Lead Free

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