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STGP30M65DF2

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description STMICROELECTRONICS STGP30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-220, 3 Pins
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Inventory: 1183
Minimum: 1
Total Price: USD $2.54
Unit Price: USD $2.541
≥1 USD $2.541
≥10 USD $2.01469
≥100 USD $1.726864
≥500 USD $1.534986
≥1000 USD $1.314334
≥3000 USD $1.237587

Technical Details

Supply Chain

Factory Lead Time 30 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 258W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGP30
Element Configuration Single
Input Type Standard
Power - Max 258W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 60A
Reverse Recovery Time 140 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.55V
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 80nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 31.6ns/115ns
Switching Energy 300μJ (on), 960μJ (off)

Alternative Model

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