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RGW60TS65DGC11

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description 650V 30A FIELD STOP TRENCH IGBT
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Inventory: 569
Minimum: 1
Total Price: USD $5.21
Unit Price: USD $5.21136
≥1 USD $5.21136
≥10 USD $4.131204
≥100 USD $3.541073
≥500 USD $3.147633
≥1000 USD $2.69516
≥3000 USD $2.537775

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~175°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 178W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 92ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 60A
Turn On Time 50 ns
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 209 ns
IGBT Type Trench Field Stop
Gate Charge 84nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 37ns/114ns
Switching Energy 480μJ (on), 490μJ (off)

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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