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IXYB82N120C3H1

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 164A 1040W PLUS264
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Inventory: 445
Minimum: 1
Total Price: USD $18
Unit Price: USD $17.99794
≥1 USD $17.99794
≥10 USD $17.468589
≥100 USD $16.939238
≥500 USD $16.277549

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 264
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series GenX3?, XPT?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.04kW
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.04kW
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 29 ns
Power - Max 1040W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 192 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 164A
Reverse Recovery Time 420 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.75V
Turn On Time 119 ns
Test Condition 600V, 80A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 82A
Turn Off Time-Nom (toff) 295 ns
Gate Charge 215nC
Current - Collector Pulsed (Icm) 320A
Td (on/off) @ 25°C 29ns/192ns
Switching Energy 4.95mJ (on), 2.78mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 26.59mm
Length 20.29mm
Width 5.31mm

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