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APT40GP90BG

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 900V 100A 543W TO247
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Technical Details

Supply Chain

Lifecycle Status NOT RECOMMENDED FOR NEW DESIGN (Last Updated: 1 month ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 7?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 900V
Max Power Dissipation 543W
Current Rating 100A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 100A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 900V
Turn On Time 43 ns
Test Condition 600V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 40A
Turn Off Time-Nom (toff) 215 ns
IGBT Type PT
Gate Charge 145nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 16ns/75ns
Switching Energy 825μJ (off)

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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