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APT11GP60BDQBG

Microsemi Corporation
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description POWER MOS 7 IGBT A NEW GENERATION OF HIGH VOLTAGE POWER
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series POWER MOS 7?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Voltage - Rated DC 600V
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 41A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 187W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 16 ns
Test Condition 400V, 11A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 11A
Turn Off Time-Nom (toff) 150 ns
IGBT Type PT
Gate Charge 40nC
Current - Collector Pulsed (Icm) 45A
Td (on/off) @ 25°C 7ns/29ns
Switching Energy 46μJ (on), 90μJ (off)

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