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APT15GT60KRG

Microsemi Corporation
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 42A 184W TO220
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series Thunderbolt IGBT?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE MATTE TIN
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 184W
Current Rating 42A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 42A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 14 ns
Test Condition 400V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 15A
Turn Off Time-Nom (toff) 225 ns
IGBT Type NPT
Gate Charge 75nC
Current - Collector Pulsed (Icm) 45A
Td (on/off) @ 25°C 6ns/105ns
Switching Energy 150μJ (on), 215μJ (off)
Gate-Emitter Thr Voltage-Max 5V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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